Technical Specifications of 2SA1225-Y(Q)
| Datasheet |  2SA1225-Y(Q) datasheet |
|---|
| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | Toshiba Semiconductor and Storage |
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| Series | - |
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| Packaging | Bulk |
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| Transistor Type | PNP |
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| Current - Collector (Ic) (Max) | 1.5A |
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| Voltage - Collector Emitter Breakdown (Max) | 160V |
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| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 50mA, 500mA |
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| Current - Collector Cutoff (Max) | 1μA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 5V |
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| Power - Max | 1W |
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| Frequency - Transition | 100MHz |
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| Mounting Type | Surface Mount |
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| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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| Supplier Device Package | PW-MOLD |
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