Technical Specifications of 2SD1221-Y(Q)
| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | Toshiba Semiconductor and Storage |
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| Series | - |
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| Packaging | Bulk |
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| Transistor Type | NPN |
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| Current - Collector (Ic) (Max) | 3A |
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| Voltage - Collector Emitter Breakdown (Max) | 60V |
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| Vce Saturation (Max) @ Ib, Ic | 1V @ 300mA, 3A |
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| Current - Collector Cutoff (Max) | 100μA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 5V |
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| Power - Max | 1W |
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| Frequency - Transition | 3MHz |
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| Mounting Type | Surface Mount |
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| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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| Supplier Device Package | PW-MOLD |
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