Technical Specifications of 2SB817C-1E
| Datasheet |  2SB817C-1E datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | ON Semiconductor |
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| Series | - |
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| Packaging | Tube |
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| Transistor Type | PNP |
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| Current - Collector (Ic) (Max) | 12A |
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| Voltage - Collector Emitter Breakdown (Max) | 140V |
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| Vce Saturation (Max) @ Ib, Ic | 2V @ 500mA, 5A |
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| Current - Collector Cutoff (Max) | 100μA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 5V |
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| Power - Max | 120W |
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| Frequency - Transition | 10MHz |
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| Mounting Type | Through Hole |
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| Package / Case | TO-3P-3, SC-65-3 |
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| Supplier Device Package | TO-3P-3L |
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