Technical Specifications of QS8J2TR
Datasheet | QS8J2TR datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Arrays |
Manufacturer | Rohm Semiconductor |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate, 1.5V Drive |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 4A |
Rds On (Max) @ Id, Vgs | 36 mOhm @ 4A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) @ Vgs | 20nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 1940pF @ 6V |
Power - Max | 550mW |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SMD, Flat Lead |
Supplier Device Package | TSMT8 |
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