Home > Products > Discrete Semiconductor > Transistors - FETs, MOSFETs - Single > IPI80P04P4L04AKSA1
IPI80P04P4L04AKSA1
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| Manufacturer Part Number | IPI80P04P4L04AKSA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | MOSFET P-CH TO262-3 |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| IPI80P04P4L04AKSA1 Price | ![]() |
Technical Specifications of IPI80P04P4L04AKSA1
| Datasheet | |
|---|---|
| Category | Discrete Semiconductor Products |
| Family | Transistors - FETs, MOSFETs - Single |
| Manufacturer | Infineon Technologies |
| Series | Automotive, AEC-Q101, OptiMOS? |
| Packaging | Tube |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7 mOhm @ 80A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250μA |
| Gate Charge (Qg) @ Vgs | 176nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 3800pF @ 25V |
| Power - Max | 125W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
| Supplier Device Package | PG-TO262-3-1 |







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