Technical Specifications of 3N163-E3
| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Vishay Siliconix |
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| Series | - |
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| Packaging | Tube |
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| FET Type | MOSFET P-Channel, Metal Oxide |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 40V |
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| Current - Continuous Drain (Id) @ 25°C | 50mA (Ta) |
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| Rds On (Max) @ Id, Vgs | 250 Ohm @ 100μA, 20V |
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| Vgs(th) (Max) @ Id | 5V @ 10μA |
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| Gate Charge (Qg) @ Vgs | - |
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| Input Capacitance (Ciss) @ Vds | 3.5pF @ 15V |
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| Power - Max | 375mW |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | Through Hole |
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| Package / Case | TO-206AF, TO-72-4 Metal Can |
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| Supplier Device Package | TO-72 |
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