Technical Specifications of FQP19N20CTSTU
Datasheet | FQP19N20CTSTU datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Fairchild Semiconductor |
Series | QFET? |
Packaging | Tube |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
Rds On (Max) @ Id, Vgs | 170 mOhm @ 9.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Gate Charge (Qg) @ Vgs | 53nC @ 10V |
Input Capacitance (Ciss) @ Vds | 1080pF @ 25V |
Power - Max | 139W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Cropped Leads |
Supplier Device Package | TO-220-3 |
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