Technical Specifications of TN5325N3-G
| Datasheet | TN5325N3-G datasheet |
| Category | Discrete Semiconductor Products |
| Family | Transistors - FETs, MOSFETs - Single |
| Manufacturer | Microchip Technology |
| Series | - |
| Packaging | Bulk |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 250V |
| Current - Continuous Drain (Id) @ 25°C | 215mA (Ta) |
| Rds On (Max) @ Id, Vgs | 7 Ohm @ 1A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Gate Charge (Qg) @ Vgs | - |
| Input Capacitance (Ciss) @ Vds | 110pF @ 25V |
| Power - Max | 740mW |
| Operating Temperature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92-3 |
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