Home > Products > Discrete Semiconductor > Transistors - FETs, MOSFETs - Single > BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
| Manufacturer Part Number | BSZ180P03NS3EGATMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | MOSFET P-CH 30V 39.6A TSDSON-8 |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| BSZ180P03NS3EGATMA1 Price | ![]() |
Technical Specifications of BSZ180P03NS3EGATMA1
| Datasheet | |
|---|---|
| Category | Discrete Semiconductor Products |
| Family | Transistors - FETs, MOSFETs - Single |
| Manufacturer | Infineon Technologies |
| Series | OptiMOS? |
| Packaging | Tape & Reel (TR) |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 39.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 18 mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 3.1V @ 48μA |
| Gate Charge (Qg) @ Vgs | 30nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 2220pF @ 15V |
| Power - Max | 2.1W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | PG-TSDSON-8 (3.3x3.3) |







Start With
Include With


















