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IPB35N10S3L26ATMA1
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| Manufacturer Part Number | IPB35N10S3L26ATMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | MOSFET N-CH TO263-3 |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| IPB35N10S3L26ATMA1 Price |  |
Technical Specifications of IPB35N10S3L26ATMA1
| Datasheet |  IPB35N10S3L26ATMA1 datasheet |
|---|---|
| Category | Discrete Semiconductor Products |
| Family | Transistors - FETs, MOSFETs - Single |
| Manufacturer | Infineon Technologies |
| Series | Automotive, AEC-Q101, OptiMOS? |
| Packaging | Tape & Reel (TR) |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 26.3 mOhm @ 35A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 39μA |
| Gate Charge (Qg) @ Vgs | 39nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 2700pF @ 25V |
| Power - Max | 71W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | PG-TO263-3-2 |
