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IPD60N10S4L12ATMA1
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| Manufacturer Part Number | IPD60N10S4L12ATMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | MOSFET N-CH TO252-3 |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| IPD60N10S4L12ATMA1 Price |  |
Technical Specifications of IPD60N10S4L12ATMA1
| Datasheet |  IPD60N10S4L12ATMA1 datasheet |
|---|---|
| Category | Discrete Semiconductor Products |
| Family | Transistors - FETs, MOSFETs - Single |
| Manufacturer | Infineon Technologies |
| Series | Automotive, AEC-Q101, OptiMOS? |
| Packaging | Tape & Reel (TR) |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 12 mOhm @ 60A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 46μA |
| Gate Charge (Qg) @ Vgs | 49nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 3170pF @ 25V |
| Power - Max | 94W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | PG-TO252-3-313 |
