Technical Specifications of 2N7000-G
Datasheet | 2N7000-G datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Microchip Technology |
Series | - |
Packaging | Bulk |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 200mA (Tj) |
Rds On (Max) @ Id, Vgs | 5 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 3V @ 1mA |
Gate Charge (Qg) @ Vgs | - |
Input Capacitance (Ciss) @ Vds | 60pF @ 25V |
Power - Max | 1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package | TO-92-3 |
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