Home > Products > Discrete Semiconductor > Transistors - FETs, MOSFETs - Single > IPB80N06S2LH5ATMA4
IPB80N06S2LH5ATMA4
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
Manufacturer Part Number | IPB80N06S2LH5ATMA4 |
---|---|
Manufacturer | Infineon Technologies |
Description | MOSFET N-CH 55V 80A TO263-3 |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
IPB80N06S2LH5ATMA4 Price |
Technical Specifications of IPB80N06S2LH5ATMA4
Datasheet | IPB80N06S2LH5ATMA4 datasheet |
---|---|
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Infineon Technologies |
Series | OptiMOS? |
Packaging | Tape & Reel (TR) |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Rds On (Max) @ Id, Vgs | 4.7 mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250μA |
Gate Charge (Qg) @ Vgs | 190nC @ 10V |
Input Capacitance (Ciss) @ Vds | 5000pF @ 25V |
Power - Max | 300W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | PG-TO263-3-2 |