Technical Specifications of DMG3415UFY4Q-7
| Datasheet |  DMG3415UFY4Q-7 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Diodes Incorporated |
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| Series | - |
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| Packaging | Cut Tape (CT) |
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| FET Type | MOSFET P-Channel, Metal Oxide |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 16V |
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| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
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| Rds On (Max) @ Id, Vgs | 39 mOhm @ 4A, 4.5V |
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| Vgs(th) (Max) @ Id | 1V @ 250μA |
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| Gate Charge (Qg) @ Vgs | 10nC @ 4.5V |
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| Input Capacitance (Ciss) @ Vds | 282pF @ 10V |
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| Power - Max | 650mW |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | 3-XFDFN |
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| Supplier Device Package | X2-DFN2015-3 |
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