Technical Specifications of IPP16CNE8N G
| Category | Discrete Semiconductor Products |
| Family | Transistors - FETs, MOSFETs - Single |
| Manufacturer | Infineon Technologies |
| Series | OptiMOS? |
| Packaging | Tube |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 85V |
| Current - Continuous Drain (Id) @ 25°C | 53A (Tc) |
| Rds On (Max) @ Id, Vgs | 16.5 mOhm @ 53A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 61μA |
| Gate Charge (Qg) @ Vgs | 48nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 3230pF @ 40V |
| Power - Max | 100W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220-3 |
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