Technical Specifications of IRF6215L-103PBF
Datasheet | IRF6215L-103PBF datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Infineon Technologies |
Series | HEXFET? |
Packaging | Tube |
FET Type | MOSFET P-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
Rds On (Max) @ Id, Vgs | 290 mOhm @ 6.6A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Gate Charge (Qg) @ Vgs | 66nC @ 10V |
Input Capacitance (Ciss) @ Vds | 860pF @ 25V |
Power - Max | 3.8W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
Supplier Device Package | TO-262 |
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