Technical Specifications of STQ2LN60K3-AP
Datasheet | STQ2LN60K3-AP datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | STMicroelectronics |
Series | SuperMESH3? |
Packaging | Tape & Box (TB) |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 600mA (Tc) |
Rds On (Max) @ Id, Vgs | 4.5 Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 50μA |
Gate Charge (Qg) @ Vgs | 12nC @ 10V |
Input Capacitance (Ciss) @ Vds | 235pF @ 50V |
Power - Max | 2.5W |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package | TO-92-3 |
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