Technical Specifications of IRFH5110TR2PBF
| Datasheet |  IRFH5110TR2PBF datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Infineon Technologies |
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| Series | HEXFET? |
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| Packaging | Cut Tape (CT) |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 100V |
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| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 63A (Tc) |
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| Rds On (Max) @ Id, Vgs | 12.4 mOhm @ 37A, 10V |
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| Vgs(th) (Max) @ Id | 4V @ 100μA |
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| Gate Charge (Qg) @ Vgs | 72nC @ 10V |
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| Input Capacitance (Ciss) @ Vds | 3152pF @ 25V |
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| Power - Max | 3.6W |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | 8-PowerVDFN |
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| Supplier Device Package | PQFN (5x6) |
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