Technical Specifications of IRG8P50N120KD-EPBF
| Datasheet |  IRG8P50N120KD-EPBF datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - IGBTs - Single |
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| Manufacturer | Infineon Technologies |
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| Series | - |
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| Packaging | Tube |
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| IGBT Type | - |
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| Voltage - Collector Emitter Breakdown (Max) | 1200V |
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| Current - Collector (Ic) (Max) | 80A |
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| Current - Collector Pulsed (Icm) | 105A |
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| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 35A |
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| Power - Max | 350W |
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| Switching Energy | 2.3mJ (on), 1.9mJ (off) |
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| Input Type | Standard |
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| Gate Charge | 315nC |
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| Td (on/off) @ 25°C | 35ns/190ns |
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| Test Condition | 600V, 35A, 5 Ohm, 15V |
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| Reverse Recovery Time (trr) | 170ns |
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| Package / Case | TO-247-3 |
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| Mounting Type | Through Hole |
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| Supplier Device Package | TO-247AD |
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