Technical Specifications of 2N5322
| Datasheet |  2N5322 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | Central Semiconductor Corp |
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| Series | - |
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| Packaging | Bulk |
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| Transistor Type | PNP |
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| Current - Collector (Ic) (Max) | 2A |
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| Voltage - Collector Emitter Breakdown (Max) | 75V |
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| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
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| Current - Collector Cutoff (Max) | 500nA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 500mA, 4V |
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| Power - Max | 10W |
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| Frequency - Transition | 50MHz |
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| Mounting Type | Through Hole |
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| Package / Case | TO-205AD, TO-39-3 Metal Can |
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| Supplier Device Package | TO-39 |
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