Home > Products > Discrete Semiconductor > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > EMF22T2R
EMF22T2R
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
| Manufacturer Part Number | EMF22T2R |
|---|---|
| Manufacturer | Rohm Semiconductor |
| Description | TRANS NPN PREBIAS/NPN 0.15W EMT6 |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| EMF22T2R Price | ![]() |
Technical Specifications of EMF22T2R
| Category | Discrete Semiconductor Products |
|---|---|
| Family | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Manufacturer | Rohm Semiconductor |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Transistor Type | 1 NPN Pre-Biased, 1 NPN |
| Current - Collector (Ic) (Max) | 100mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V, 12V |
| Resistor - Base (R1) (Ohms) | 10k |
| Resistor - Emitter Base (R2) (Ohms) | 10k |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V / 270 @ 10mA, 2V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500μA, 10mA / 250mV @ 10mA, 200mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | 250MHz, 320MHz |
| Power - Max | 150mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | EMT6 |







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